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BSC0910NDIATMA1

Infineon Technologies
BSC0910NDIATMA1 HongDa Electronics BSC0910NDIATMA1
  • Manufacturer Part# BSC0910NDIATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2N-CH 25V 16A/31A TISON8
  • More DetailMosfet Array 2 N-Channel (Dual) Asymmetrical 25V 1...
In Stock: 1000

Can ship immediately

Datasheet:
BSC0910NDIATMA1 Datasheet

Technical Details

  • Series:OptiMOS™
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:11A, 31A
  • Rds On (Max) @ Id, Vgs:4.6 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:6.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 12V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TISON-8

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