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BSC900N20NS3GATMA1

Infineon Technologies
BSC900N20NS3GATMA1 HongDa Electronics BSC900N20NS3GATMA1
  • Manufacturer Part# BSC900N20NS3GATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 15.2A 8TDSON
  • More DetailN-Channel 200V 15.2A (Tc) 62.5W (Tc) Surface Mount...
In Stock: 1000

Can ship immediately

Datasheet:
BSC900N20NS3GATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 30µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TDSON-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):62.5W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:920pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:11.6nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:90 mOhm @ 7.6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:15.2A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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