BSM080D12P2C008

Technical Details

• Series:--
• Packaging:Tray 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:80A
• Rds On (Max) @ Id, Vgs:--
• Vgs(th) (Max) @ Id:4V @ 13.2mA

• Gate Charge (Qg) (Max) @ Vgs:--
• Input Capacitance (Ciss) (Max) @ Vds:800pF @ 10V
• Power - Max:600W
• Operating Temperature:175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module