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BSM180D12P2C101

ROHM Semiconductor
BSM180D12P2C101 HongDa Electronics BSM180D12P2C101
  • Manufacturer Part# BSM180D12P2C101
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2N-CH 1200V 180A MODULE
  • More DetailMosfet Array 2 N-Channel (Half Bridge) 1200V (1.2k...
In Stock: 17

Can ship immediately

Datasheet:
BSM180D12P2C101 Datasheet

Technical Details

  • Series:--
  • Packaging:Bulk 
  • Part Status:Active
  • FET Type:2 N-Channel (Half Bridge)
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:180A
  • Rds On (Max) @ Id, Vgs:--

 

  • Vgs(th) (Max) @ Id:4V @ 35.2mA
  • Gate Charge (Qg) (Max) @ Vgs:--
  • Input Capacitance (Ciss) (Max) @ Vds:23000pF @ 10V
  • Power - Max:1130W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Package / Case:Module
  • Supplier Device Package:Module

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