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BSM75GB170DN2HOSA1

Infineon Technologies
BSM75GB170DN2HOSA1 HongDa Electronics BSM75GB170DN2HOSA1
  • Manufacturer Part# BSM75GB170DN2HOSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionIGBT 1700V 110A 625W MODULE
  • More DetailIGBT Module Half Bridge 1700V 110A 625W Chassis M...
In Stock: 1000

Can ship immediately

Datasheet:
BSM75GB170DN2HOSA1 Datasheet

Technical Details

  • Series:--
  • Part Status:Obsolete
  • IGBT Type:--
  • Configuration:Half Bridge
  • Voltage - Collector Emitter Breakdown (Max):1700V
  • Current - Collector (Ic) (Max):110A
  • Power - Max:625W
  • Vce(on) (Max) @ Vge, Ic:3.9V @ 15V, 75A

 

  • Input Capacitance (Cies) @ Vce:11nF @ 25V
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module

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