BSO080P03SNTMA1 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.2V @ 250µA
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:PG-DSO-8
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.79W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:5890pF @ 25V
• Vgs (Max):±25V
• Gate Charge (Qg) (Max) @ Vgs:136nC @ 10V

• Series:OptiMOS™
• Rds On (Max) @ Id, Vgs:8 mOhm @ 14.9A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:12.6A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)