BSR50_J35Z

Technical Details

• Series:--
• Packaging:Bulk 
• Part Status:Obsolete
• Transistor Type:NPN - Darlington
• Current - Collector (Ic) (Max):1.5A
• Voltage - Collector Emitter Breakdown (Max):45V
• Vce Saturation (Max) @ Ib, Ic:1.6V @ 4mA, 1A
• Current - Collector Cutoff (Max):50nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 500mA, 10V
• Power - Max:625mW
• Frequency - Transition:--
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package:TO-92-3