BSV236SP L6327 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1.2V @ 8µA
• Package / Case:6-VSSOP, SC-88, SOT-363
• Supplier Device Package:PG-SOT363-6
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):560mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:228pF @ 15V
• Vgs (Max):±12V
• Gate Charge (Qg) (Max) @ Vgs:5.7nC @ 4.5V

• Series:OptiMOS™
• Rds On (Max) @ Id, Vgs:175 mOhm @ 1.5A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)