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BSZ0500NSIATMA1

Infineon Technologies
BSZ0500NSIATMA1 HongDa Electronics BSZ0500NSIATMA1
  • Manufacturer Part# BSZ0500NSIATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 30A 8SON
  • More DetailN-Channel 30V 30A (Ta), 40A (Tc) 2.1W (Ta), 69W (T...
In Stock: 1000

Can ship immediately

Datasheet:
BSZ0500NSIATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TSDSON-8-FL
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.1W (Ta), 69W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3400pF @ 15V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:52nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:1.5 mOhm @ 20A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:30A (Ta), 40A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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