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BSZ097N04LSGATMA1 Discrete Semiconductor Products

Infineon Technologies
BSZ097N04LSGATMA1 HongDa Electronics BSZ097N04LSGATMA1
  • Manufacturer Part# BSZ097N04LSGATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 40V 40A TSDSON-8N-Channel 40V 12A (Ta)...
  • More DetailN/A
In Stock: 1000

Can ship immediately

Datasheet:
BSZ097N04LSGATMA1 Datasheet

Technical Details

  • Series:OptiMOS™
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:9.7 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2V @ 14µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1900pF @ 20V
  • FET Feature:--
  • Power Dissipation (Max):2.1W (Ta), 35W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TSDSON-8
  • Package / Case:8-PowerTDFN
  • Base Part Number:--

Description



1. Features

    1. FastswitchingMOSFETforSMPS

    2. OptimizedtechnologyforDC/DCconverters

    3. QualifiedaccordingtoJEDEC1)fortargetapplications

    4. N-channel;Logiclevel

    5. ExcellentgatechargexRDS(on)product(FOM)

    6. Verylowon-resistanceRDS(on)

    7. Superiorthermalresistance

    8. 100%Avalanchetested

    9. Pb-freeplating;RoHScompliant

   10. Halogen-freeaccordingtoIEC61249-2-21

2. PackageOutlines

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