BTS282ZE3230AKSA2

Technical Details

• Vgs(th) (Max) @ Id:2V @ 240µA
• Package / Case:TO-220-7
• Supplier Device Package:PG-TO-220-7-12
• Mounting Type:Through Hole
• Operating Temperature:-40°C ~ 175°C (TJ)
• Power Dissipation (Max):300W (Tc)
• FET Feature:Temperature Sensing Diode
• Input Capacitance (Ciss) (Max) @ Vds:4800pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:232nC @ 10V

• Series:TEMPFET®
• Rds On (Max) @ Id, Vgs:6.5 mOhm @ 36A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:80A (Tc)
• Drain to Source Voltage (Vdss):49V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube