C2M0080170P

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:120nC @ 20V
• Package / Case:TO-247-4
• Supplier Device Package:TO-247-4L
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):277W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2250pF @ 1000V
• Vgs (Max):+25V, -10V
• Series:C2M™

• Vgs(th) (Max) @ Id:4V @ 10mA
• Rds On (Max) @ Id, Vgs:125 mOhm @ 28A, 20V
• Drive Voltage (Max Rds On, Min Rds On):20V
• Current - Continuous Drain (Id) @ 25°C:40A (Tc)
• Drain to Source Voltage (Vdss):1700V
• Technology:SiCFET (Silicon Carbide)
• FET Type:N-Channel
• Part Status:Active