CAS325M12HM2

Technical Details

• Series:Z-REC™
• Packaging:Bulk 
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C:444A (Tc)
• Rds On (Max) @ Id, Vgs:4.3 mOhm @ 400A, 20V

• Vgs(th) (Max) @ Id:4V @ 105mA
• Gate Charge (Qg) (Max) @ Vgs:1127nC @ 20V
• Power - Max:3000W
• Operating Temperature:175°C (TJ)
• Package / Case:Module
• Supplier Device Package:Module