CPMF-1200-S080B

Technical Details

• Vgs(th) (Max) @ Id:4V @ 1mA
• Package / Case:Die
• Supplier Device Package:Die
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):313mW (Tj)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1915pF @ 800V
• Vgs (Max):+25V, -5V
• Gate Charge (Qg) (Max) @ Vgs:90.8nC @ 20V

• Series:Z-FET™
• Rds On (Max) @ Id, Vgs:110 mOhm @ 20A, 20V
• Drive Voltage (Max Rds On, Min Rds On):20V
• Current - Continuous Drain (Id) @ 25°C:50A (Tj)
• Drain to Source Voltage (Vdss):1200V
• Technology:SiCFET (Silicon Carbide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Bulk