• Manufacturer Part# CSD16301Q2
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 25V 6-SONN-Channel 25V 5A (Tc) 2.3W (T...
  • More DetailN/A
In Stock: 66000

Can ship immediately

Technical Details

  • Series:NexFET™
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):3V, 8V
  • Rds On (Max) @ Id, Vgs:24 mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id:1.55V @ 250µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:2.8nC @ 4.5V
  • Vgs (Max):+10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds:340pF @ 12.5V
  • FET Feature:--
  • Power Dissipation (Max):2.3W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-SON
  • Package / Case:6-SMD, Flat Leads
  • Base Part Number:--

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Description

This 25-V, 19-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2-mm × 2-mm SON package offers excellent thermal performance for the size of the package.

2. Features

    1. Ultra-Low Qg and Qgd

    2. Low Thermal Resistance

    3. Lead-Free Terminal Plating

    4. RoHS Compliant

    5. Halogen Free

    6. SON 2-mm × 2-mm Plastic Package

3. Applications

    1. DC-DC Converters

    2. Battery and Load Management Applications

4. Product Summary

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5. Electrical characteristics

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6. Package Dimensions

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