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CSD19538Q2T

Texas Instruments
CSD19538Q2T HongDa Electronics CSD19538Q2T
  • Manufacturer Part# CSD19538Q2T
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET NCH 100V 13.1A 6WSON
  • More DetailN-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Su...
In Stock: 1000

Can ship immediately

Datasheet:
CSD19538Q2T Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.8V @ 250µA
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-WSON (2x2)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.5W (Ta), 20.2W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:454pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:5.6nC @ 10V

 

  • Series:NexFET™
  • Rds On (Max) @ Id, Vgs:59 mOhm @ 5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:13.1A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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