DG636EEN-T1-GE4

Technical Details

• Voltage - Supply, Dual (V±):±3 V ~ 8 V
• Supplier Device Package:16-miniQFN (1.8x2.6)
• Package / Case:16-UFQFN
• Operating Temperature:-40°C ~ 125°C (TA)
• Crosstalk:-62dB @ 1MHz
• Current - Leakage (IS(off)) (Max):1nA
• Channel Capacitance (CS(off), CD(off)):3.7pF, 4.4pF
• Charge Injection:-0.33pC
• -3db Bandwidth:700MHz
• Switch Time (Ton, Toff) (Max):46ns, 55ns

• Series:--
• Voltage - Supply, Single (V+):3 V ~ 16 V
• Channel-to-Channel Matching (ΔRon):300 mOhm
• On-State Resistance (Max):96 Ohm
• Number of Circuits:2
• Multiplexer/Demultiplexer Circuit:2:1
• Switch Circuit:SPDT
• Part Status:Active
• Packaging:Tape & Reel (TR)