DMJ70H900HJ3

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-251-3, IPak, Short Leads
• Supplier Device Package:TO-251
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):68W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:603pF @ 50V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:18.4nC @ 10V

• Series:Automotive, AEC-Q101
• Rds On (Max) @ Id, Vgs:900 mOhm @ 1.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:7A (Tc)
• Drain to Source Voltage (Vdss):700V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube