DMT10H010SPS-13

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:8-PowerTDFN
• Supplier Device Package:PowerDI5060-8
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.2W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:4.468nF @ 50V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:56.4nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:8.8 mOhm @ 13A, 10V
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Current - Continuous Drain (Id) @ 25°C:10.7A (Ta), 113A (Tc)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)