EMB11T2R Discrete Semiconductor Products

Technical Details

• DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 5V
• Base Part Number:MB11
• Supplier Device Package:EMT6
• Package / Case:SOT-563, SOT-666
• Mounting Type:Surface Mount
• Power - Max:150mW
• Frequency - Transition:250MHz
• Current - Collector Cutoff (Max):500nA
• Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA

• Series:--
• Resistor - Emitter Base (R2):10 kOhms
• Resistor - Base (R1):10 kOhms
• Voltage - Collector Emitter Breakdown (Max):50V
• Current - Collector (Ic) (Max):100mA
• Transistor Type:2 PNP - Pre-Biased (Dual)
• Part Status:Active
• Packaging:Tape & Reel (TR)