• Manufacturer Part# EMD29T2R
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN/PNP PREBIAS 0.12W EMT6
  • More DetailPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
In Stock: 1000

Can ship immediately

Datasheet:

Technical Details

  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 140 @ 100mA, 2V
  • Base Part Number:*MD29
  • Supplier Device Package:EMT6
  • Package / Case:SOT-563, SOT-666
  • Mounting Type:Surface Mount
  • Power - Max:120mW
  • Frequency - Transition:250MHz, 260MHz
  • Current - Collector Cutoff (Max):500nA
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA

 

  • Series:--
  • Resistor - Emitter Base (R2):10 kOhms
  • Resistor - Base (R1):1 kOhms, 10 kOhms
  • Voltage - Collector Emitter Breakdown (Max):50V, 12V
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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