EMD4DXV6T1G Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max):100mA
• Voltage - Collector Emitter Breakdown (Max):50V
• Resistor - Base (R1):47 kOhms, 10 kOhms
• Resistor - Emitter Base (R2):47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V

• Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max):500nA
• Frequency - Transition:--
• Power - Max:500mW
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:SOT-563