EMD6FHAT2R Discrete Semiconductor Products

Technical Details

• Series:Automotive, AEC-Q101
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max):100mA
• Voltage - Collector Emitter Breakdown (Max):50V
• Resistor - Base (R1):4.7 kOhms
• Resistor - Emitter Base (R2):--
• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V

• Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max):500nA (ICBO)
• Frequency - Transition:250MHz
• Power - Max:150mW
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:EMT6