EMF17T2R

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Not For New Designs
• Transistor Type:1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max):100mA, 150mA
• Voltage - Collector Emitter Breakdown (Max):50V
• Resistor - Base (R1):2.2 kOhms
• Resistor - Emitter Base (R2):2.2 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20mA, 5V / 180 @ 1mA, 6V

• Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max):500nA
• Frequency - Transition:250MHz, 140MHz
• Power - Max:150mW
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:EMT6