EMF8T2R

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Not For New Designs
• Transistor Type:1 NPN Pre-Biased, 1 NPN
• Current - Collector (Ic) (Max):100mA, 500mA
• Voltage - Collector Emitter Breakdown (Max):50V, 12V
• Resistor - Base (R1):47 kOhms
• Resistor - Emitter Base (R2):47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V / 270 @ 10mA, 2V

• Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (Max):500nA
• Frequency - Transition:250MHz, 320MHz
• Power - Max:150mW
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:EMT6