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EMH2T2R

ROHM Semiconductor
EMH2T2R HongDa Electronics EMH2T2R
  • Manufacturer Part# EMH2T2R
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS 2NPN PREBIAS 0.15W EMT6
  • More DetailPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
In Stock: 24000

Can ship immediately

Datasheet:
EMH2T2R Datasheet

Technical Details

  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • Base Part Number:*MH2
  • Supplier Device Package:EMT6
  • Package / Case:SOT-563, SOT-666
  • Mounting Type:Surface Mount
  • Power - Max:150mW
  • Frequency - Transition:250MHz
  • Current - Collector Cutoff (Max):500nA
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA

 

  • Series:--
  • Resistor - Emitter Base (R2):47 kOhms
  • Resistor - Base (R1):47 kOhms
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Current - Collector (Ic) (Max):100mA
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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