EMH9T2R Discrete Semiconductor Products

Technical Details

• DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
• Base Part Number:*MH9
• Supplier Device Package:EMT6
• Package / Case:SOT-563, SOT-666
• Mounting Type:Surface Mount
• Power - Max:150mW
• Frequency - Transition:250MHz
• Current - Collector Cutoff (Max):500nA
• Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA

• Series:--
• Resistor - Emitter Base (R2):47 kOhms
• Resistor - Base (R1):10 kOhms
• Voltage - Collector Emitter Breakdown (Max):50V
• Current - Collector (Ic) (Max):100mA
• Transistor Type:2 NPN - Pre-Biased (Dual)
• Part Status:Active
• Packaging:Tape & Reel (TR)