EMZ51T2R Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:NPN, PNP
• Current - Collector (Ic) (Max):200mA
• Voltage - Collector Emitter Breakdown (Max):20V
• Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
• Power - Max:150mW
• Frequency - Transition:400MHz, 350MHz
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:EMT6