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EPC2100ENG

EPC
EPC2100ENG HongDa Electronics EPC2100ENG
  • Manufacturer Part# EPC2100ENG
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS GAN 2N-CH 30V BUMPED DIE
  • More DetailMosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta...
In Stock: 1000

Can ship immediately

Datasheet:
EPC2100ENG Datasheet

Technical Details

  • Series:eGaN®
  • Packaging:Tray 
  • Part Status:Discontinued at Digi-Key
  • FET Type:2 N-Channel (Half Bridge)
  • FET Feature:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Ta)
  • Rds On (Max) @ Id, Vgs:8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 4mA, 2.5V @ 16mA

 

  • Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 15V, 19nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:475pF @ 15V, 1960pF @ 15V
  • Power - Max:--
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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