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EPC2106ENGRT Discrete Semiconductor Products

EPC
EPC2106ENGRT HongDa Electronics EPC2106ENGRT
  • Manufacturer Part# EPC2106ENGRT
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS GAN 2N-CH 100V BUMPED DIE
  • More DetailMosfet Array 2 N-Channel (Half Bridge) 100V 1.7A ...
In Stock: 17500

Can ship immediately

Datasheet:
EPC2106ENGRT Datasheet

Technical Details

  • Series:eGaN®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:2 N-Channel (Half Bridge)
  • FET Feature:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:1.7A
  • Rds On (Max) @ Id, Vgs:70 mOhm @ 2A, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 600µA

 

  • Gate Charge (Qg) (Max) @ Vgs:0.73nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:75pF @ 50V
  • Power - Max:--
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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