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EPC2101ENG

EPC
EPC2101ENG HongDa Electronics EPC2101ENG
  • Manufacturer Part# EPC2101ENG
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS GAN 2N-CH 60V BUMPED DIE
  • More DetailMosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 3...
In Stock: 1000

Can ship immediately

Datasheet:
EPC2101ENG Datasheet

Technical Details

  • Series:eGaN®
  • Packaging:Tray 
  • Part Status:Discontinued at Digi-Key
  • FET Type:2 N-Channel (Half Bridge)
  • FET Feature:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:9.5A, 38A
  • Rds On (Max) @ Id, Vgs:11.5 mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 2mA

 

  • Gate Charge (Qg) (Max) @ Vgs:2.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:300pF @ 30V
  • Power - Max:--
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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