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EPC2110ENGRT Discrete Semiconductor Products

EPC
EPC2110ENGRT HongDa Electronics EPC2110ENGRT
  • Manufacturer Part# EPC2110ENGRT
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS GAN 2N-CH 120V BUMPED DIE
  • More DetailMosfet Array 2 N-Channel (Dual) Common Source 120V...
In Stock: 12500

Can ship immediately

Datasheet:
EPC2110ENGRT Datasheet

Technical Details

  • Series:eGaN®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:2 N-Channel (Dual) Common Source
  • FET Feature:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):120V
  • Current - Continuous Drain (Id) @ 25°C:3.4A
  • Rds On (Max) @ Id, Vgs:60 mOhm @ 4A, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 700µA

 

  • Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:80pF @ 60V
  • Power - Max:--
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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