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EPC2111ENGRT Discrete Semiconductor Products

EPC
EPC2111ENGRT HongDa Electronics EPC2111ENGRT
  • Manufacturer Part# EPC2111ENGRT
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS GAN ASYMMETRICAL HALF BRID
  • More DetailMosfet Array 2 N-Channel (Half Bridge) 30V 16A (Ta...
In Stock: 6000

Can ship immediately

Datasheet:
EPC2111ENGRT Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:2 N-Channel (Half Bridge)
  • FET Feature:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:16A (Ta)
  • Rds On (Max) @ Id, Vgs:19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 5mA

 

  • Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 5V, 5.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:230pF @ 15V, 590pF @ 15V
  • Power - Max:--
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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