EPC8009 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Package / Case:Die
• Supplier Device Package:Die
• Mounting Type:Surface Mount
• Operating Temperature:-40°C ~ 150°C (TJ)
• Power Dissipation (Max):--
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:52pF @ 32.5V
• Vgs (Max):+6V, -4V
• Gate Charge (Qg) (Max) @ Vgs:0.45nC @ 5V

• Series:eGaN®
• Rds On (Max) @ Id, Vgs:130 mOhm @ 500mA, 5V
• Drive Voltage (Max Rds On, Min Rds On):5V
• Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
• Drain to Source Voltage (Vdss):65V
• Technology:GaNFET (Gallium Nitride)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)