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ESM2012DV

STMicroelectronics
ESM2012DV HongDa Electronics ESM2012DV
  • Manufacturer Part# ESM2012DV
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN DARL 120V 120A ISOTOP
  • More DetailBipolar (BJT) Transistor NPN - Darlington 120V 120...
In Stock: 1000

Can ship immediately

Datasheet:
ESM2012DV Datasheet

Technical Details

  • Series:--
  • Packaging:Tube 
  • Part Status:Obsolete
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):120A
  • Voltage - Collector Emitter Breakdown (Max):120V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1A, 100A
  • Current - Collector Cutoff (Max):--

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:1200 @ 100A, 5V
  • Power - Max:175W
  • Frequency - Transition:--
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:ISOTOP
  • Supplier Device Package:ISOTOP®

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