FCB199N65S3

Technical Details

• Vgs(th) (Max) @ Id:4.5V @ 1.4mA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D²PAK (TO-263)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):98W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1225pF @ 400V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V

• Series:SuperFET® III
• Rds On (Max) @ Id, Vgs:199 mOhm @ 7A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:14A (Tc)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)