FCB260N65S3

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D²PAK (TO-263)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):90W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1010pF @ 400V
• Vgs (Max):±30V
• Series:SuperFET® III

• Vgs(th) (Max) @ Id:4.5V @ 1.2mA
• Rds On (Max) @ Id, Vgs:260 mOhm @ 6A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:12A (Tc)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active