FCD600N65S3R0

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:D-PAK (TO-252)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):54W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:465pF @ 400V
• Vgs (Max):±30V
• Series:SuperFET® III

• Vgs(th) (Max) @ Id:4.5V @ 600µA
• Rds On (Max) @ Id, Vgs:600 mOhm @ 3A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:6A (Tc)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active