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FCH099N65S3_F155

ON Semiconductor
FCH099N65S3_F155 HongDa Electronics FCH099N65S3_F155
  • Manufacturer Part# FCH099N65S3_F155
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 30A TO247-3
  • More DetailN-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
FCH099N65S3_F155 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:61nC @ 10V
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):227W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2480pF @ 400V
  • Vgs (Max):±30V
  • Series:SuperFET® III

 

  • Vgs(th) (Max) @ Id:4.5V @ 3mA
  • Rds On (Max) @ Id, Vgs:99 mOhm @ 15A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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