FCH165N65S3R0-F155

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
• Package / Case:TO-247-3
• Supplier Device Package:TO-247-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):154W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1500pF @ 400V
• Vgs (Max):±30V
• Series:SuperFET® III

• Vgs(th) (Max) @ Id:4.5V @ 1.9mA
• Rds On (Max) @ Id, Vgs:165 mOhm @ 9.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:19A (Tc)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active