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FDA20N50-F109

ON Semiconductor
FDA20N50-F109 HongDa Electronics FDA20N50-F109
  • Manufacturer Part# FDA20N50-F109
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 500V 22A TO-3P
  • More DetailN-Channel 500V 22A (Tc) 280W (Tc) Through Hole TO-...
In Stock: 450

Can ship immediately

Datasheet:
FDA20N50-F109 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3PN
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):280W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3120pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:59.5nC @ 10V

 

  • Series:UniFET™
  • Rds On (Max) @ Id, Vgs:230 mOhm @ 11A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:22A (Tc)
  • Drain to Source Voltage (Vdss):500V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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