FDB1D7N10CL7

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:163nC @ 10V
• Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
• Supplier Device Package:D²PAK (TO-263)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):250W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:11600pF @ 50V
• Vgs (Max):±20V
• Series:PowerTrench®

• Vgs(th) (Max) @ Id:4V @ 700µA
• Rds On (Max) @ Id, Vgs:1.65 mOhm @ 100A, 15V
• Drive Voltage (Max Rds On, Min Rds On):6V, 15V
• Current - Continuous Drain (Id) @ 25°C:268A (Tc)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active