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FDD14AN06LA0-F085

ON Semiconductor
FDD14AN06LA0-F085 HongDa Electronics FDD14AN06LA0-F085
  • Manufacturer Part# FDD14AN06LA0-F085
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 9.5A DPAK-3N-Channel 60V 9.5A (Ta)...
  • More DetailN/A
In Stock: 1000

Can ship immediately

Datasheet:
FDD14AN06LA0-F085 Datasheet

Technical Details

  • Series:Automotive, AEC-Q101, PowerTrench®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:9.5A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:11.6 mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:32nC @ 5V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2810pF @ 25V
  • FET Feature:--
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number:FDD14AN06LA0-F085

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Features

    1. rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A

    2. Qg(tot) = 25nC (Typ.), VGS = 5V

    3. Low Miller Charge

    4. Low QRR Body Diode

    5. UIS Capability (Single Pulse and Repetitive Pulse)

    6. Qualified to AEC Q101

    7. RoHS Compliant

2. Applications

    1. Motor / Body Load Contro

    2. ABS Systems

    3. Powertrain Management

    4. Injection Systems

    5. DC-DC converters and Off-line UPS

    6. Distributed Power Architectures and VRMs

    7. Primary Switch for 12V and 24V systems

3. Product Size

     image.png

         image.png



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