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1. Description
This P−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 2 5V)
2. Features
1. −40 A, −30 V
- RDS(ON) = 20 m @ VGS = –10 V
- RDS(ON) = 30 m @ VGS = –4.5 V
2. Fast Switching Speed
3. High Performance Trench Technology for Extremely Low RDS(ON)
4. High Power and Current Handling Capability
5. Qualified to AEC Q101
6. This Device is Pb−Free and are RoHS Compliant
3. Package overview
