FDD9410L-F085

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:43nC @ 10V
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:TO-252, (D-Pak)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):75W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1960pF @ 20V
• Vgs (Max):±20V
• Series:--

• Vgs(th) (Max) @ Id:3V @ 250µA
• Rds On (Max) @ Id, Vgs:4.2 mOhm @ 50A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:50A (Tc)
• Drain to Source Voltage (Vdss):40V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active