FDM100-0045SP

Technical Details

• Vgs(th) (Max) @ Id:4V @ 1mA
• Package / Case:i4-Pac™-5
• Supplier Device Package:ISOPLUS i4-PAC™
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):--
• FET Feature:--
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:100nC @ 10V
• Series:--

• Rds On (Max) @ Id, Vgs:7.2 mOhm @ 80A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Drain to Source Voltage (Vdss):55V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube