FDMB668P Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-MLP, MicroFET (3x1.9)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.9W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2085pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:59nC @ 10V

• Series:PowerTrench®
• Rds On (Max) @ Id, Vgs:35 mOhm @ 6.1A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:6.1A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)