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FDP027N08B-F102

ON Semiconductor
FDP027N08B-F102 HongDa Electronics FDP027N08B-F102
  • Manufacturer Part# FDP027N08B-F102
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 80V 120A TO-220-3
  • More DetailN-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-...
In Stock: 319

Can ship immediately

Datasheet:
FDP027N08B-F102 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):246W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:13530pF @ 40V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:178nC @ 10V

 

  • Series:PowerTrench®
  • Rds On (Max) @ Id, Vgs:2.7 mOhm @ 100A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drain to Source Voltage (Vdss):80V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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