FDR858P

Technical Details

• Vgs(th) (Max) @ Id:3V @ 250µA
• Package / Case:8-SMD, Gull Wing
• Supplier Device Package:SuperSOT™-8
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.8W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2010pF @ 15V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:30nC @ 5V

• Series:--
• Rds On (Max) @ Id, Vgs:19 mOhm @ 8A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:8A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)