FDS5690-NBBM009A Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):2.5W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1107pF @ 30V
• Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V

• Series:PowerTrench®
• Rds On (Max) @ Id, Vgs:28 mOhm @ 7A, 10V
• Current - Continuous Drain (Id) @ 25°C:7A (Ta)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Discontinued at Digi-Key
• Packaging:Cut Tape (CT)